IRF1302L |
RFQ for IRF1302L Required Field |
 |
| Product | Manufacturers | Pack | D/C |
| IRF1302L | - | TO-262 | `06+(pb-free) |
Specifically designed for Automotive applications, this Stripe Planar design of HEXFET Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 junction operatin temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Features |
| `Advanced Process Technology`Ultra Low On-Resistance`Dynamic dv/dt Rating`175 Operating Temperatur`Fast Switching`Repetitive Avalanche Allowed up to Tjmax |
| Parameter | Max. | Units | |
| ID @ TC =25 | Continuous Drain Current,VGS @ 10V | 174 | A |
| ID @ TC =100 | Continuous Drain Current,VGS @ 10V | 120 | |
| IDM | Pulsed Drain Current | 700 | |
| PD @ TC =25 | Power Dissipation | 200 | W |
| Linear Derating Factor | 1.4 | W/ | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS | Single Pulse Avalanche Energy | 350 | mJ |
| IAR | Avalanche Current | See Fig.12a, 12b, 15, 16 | A |
| EAR | Repetitive Avalanche Energy | mJ | |
| dv/dt | Peak Diode Recovery dv/dt | TBD | V/ns |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 | |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case) |
